Japanese Scientists Discovers a Method to Make MRAM Faster and Energy Efficient

The two future RAM technologies that the scientists have been working on are STT-RAM and MRAM. Spin torque transfer RAM (STT-RAM) has advantages of lower power consumption and better scalability over the Magnetoresistive RAM (MRAM). The main reason behind high power requirement of MRAM is that it uses electromagnet as the middleman to flip domains. Domains are the tiny regions inside magnetic materials that behave like individual magnets and can have their north-south orientation flipped to store information. Read More